Semiconductor Detectors GaAs based p-i-n detector with peak responsivity of 35 mA /Watt at ~650nm and their radiation hardness value ~ 4.7x10-19A/cm. GaAs/AlGaAs based (p and n-type) 50 periods quantum well infrared detector (QWIP) devices with inter-subband transitions at 9.7mm and 8.4mm along with low dark current are developed. Apart from QWIP, Quantum dot infrared photodetectors (QDIPs) and Quantum dot (QD) of InAs embedded in InGaAs quantum well (DWELL) devices are in progress.
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a) Responsivity spectra of p-i-n detectors, b) Leakage current and mobility with γ-ray irradiation doses c) TEM image of QWIP structures d) Absorption spectra of QWIP structures
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