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Semiconductor Laser Section

Semiconductor Materials and Nanostructures

Typical list of semiconductor materials/structures/nanostructures are grown by MOVPE (AIX200)  

  • Heterostructures based on AlGaAs/GaAs, InGaP/GaAs, AlInGaP/InGaP/GaAs, AlGaP/GaP.
  • Multi QWs based on GaAs/AlGaAs, GaAsP/AlGaAs, InGaP/AlInGaP on GaAs and InAsP on InP substrates.
  • Ultra thin QW of InAs/GaAs and InP/GaAs.
  • Quantum dot structures growth of InGaP on GaP, InAs on GaAs, InAs on InGaAs/GaAs,  and InP on GaAs  substrates
  • Growth of GaP,InP, GaAs epilayer and InAs nanostructure  on silicon substrates
  • Epilayer of InP and GaP on GaAs substrates.
  • DBR structures based on AlAs/GaAs.

Several nanostructures (nanoporous, nanowires, etc) of GaP, GaN and Ga2O3 have also been fabricated with electrochemical etching and thermal oxidation roots.

(a) (b)
(c) (d)

AFM image of a) InP QD grown on GaAs b) InAs QD grown on InGaAs/GaAs and SEM image of c) InAs d)Ga2O3 nanostructures

 
(a) (b)

a) PL spectra of InP/GaAs type II QWs b) Carrier depth profile of InAsP/InP QWs

 

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