Semiconductor Laser

The most important step in the fabrication of a laser diode is the epitaxial growth of a multilayer heterostructure. Multilayer heterostructures have been grown by Metal-Organic Vapor Phase Epitaxy (MOVPE) techniques. We have MOVPE system (AIX200) commissioned in a class 10,000 clean room at RRCAT. This MOVPE system is equipped with almost all the modern techniques necessary to make high quality heterostructures, quantum wells (QW) and superlattices and Laser structures, etc.  We have achieved continuous wave (CW) lasing of semiconductor diode laser with an average power of more than 150mW/facet for 980nm wavelength and  peak power ~5 Watt under pulsed operation for  670 to 1000 nm wavelength range. Our present emphasis is towards increasing the CW power of these laser diodes.

L-I characteristics and emission spectra of CW operated semiconductor laser diode