Publications in Journals

2010

1. "Growth and characterization of antimony based narrow band gap III-V semiconductor crystals for infrared detector applications: A Review", V.K. Dixit and H.L.Bhat, Springer Verlag  “Handbook of Crystal Growth” 2010.
   
   
2. Synthesis and characterization of cadmium selenide nanostructures on porous aluminum oxide templates by high frequency alternating current electrolysis", P. Ram Sankar, Pragya Tiwari, Ravi Kumar, Tapas Ganguli, C. Mukherjee, A.K. Srivastava, S.M. Oak, Rajesh K. Pathak, 256, 2097, (2010).
   
   
3. “Structures and the Electronic Properties of Au19X clusters (X= Li, Na, K, Rb, Cs, Cu and Ag)”, Tapan K. Ghanty, Arup Banerjee and Aparna Chakrabarti,J. Phys. Chem. C, 114, 20 (2010).
   

2009

1. "A method for evaluating the ground state excitonic band gaps of strained InxGa11-x N/GaN quantum wells" T. K. Sharma and E. Towe J. Appl. Phys. 106, 104509 (2009).
   


2. "Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells", T. K. Sharma, R. Jangir, S. Porwal, R. Kumar, Tapas Ganguli, M. Zorn, U. Zeimer, F. Bugge, M. Weyers, and S. M. Oak, Phy. Rev B 80, 165403 (2009).
   


3. "A method of obtaining simultaneous complementary spectroscopic information on self-assembled quantum dots", T. K. Sharma and T. J. C. Hosea, Jpn. J. Appl. Phys. 48, 082301(2009).
   


4. "Fourier Transform Infrared Surface Photovoltage Spectroscopy for the investigation of mid-infrared semiconductor lasers", T. K. Sharma, N. Fox and T. J. C. Hosea, Phys. Stat. Solidi (a) 206, 808 (2009).
   


5. "An EXAFS study of the structure of the Zn1-xBexSe alloy system", Tapas Ganguli, J Mazher, A Polian, S K Deb, O Pages and F Firszt, J. Phys.: Conf. Ser. Vol 190 p 012064 (2009).
   


6. "Room temperature characterisation of novel InGaAlAs quantum well laser structures using electro-modulated reflectance and surface photovoltage spectroscopy", Natasha E. Fox, T. K. Sharma, Stephen J. Sweeney, and T. J. C. Hosea, Phys. Stat. Solidi (a) 206, 796 (2009).
   


7. "Temperature Dependent Photoluminescence Processes in ZnO Thin Films Grown on Sapphire by Pulsed Laser Deposition", P. Misra, T. K. Sharma and L. M. Kukreja, Current Applied Physics, 9, 179 (2009).
   


8. Time-dependent density functional theory calculation of van der Waals coefficient of potassium clusters, Arup Banerjee, Aparna Chakrabarti, and Tapan K. Ghanty Int. J. Quantum Chem., 109, 1376 (2009)
   


9. Ab initio study of stoichiometric gallium phosphide clusters, C. Kamal, Tapan K. Ghanty,  Arup Banerjee, and Aparna Chakrabarti, J. Chem. Phys.  130, 024308 (2009).
   


10. Theory of shape evolution of InAs quantum dots on In 0.5 Ga 0.5 As/InP(001) substrate, Peter Kratzer, Aparna Chakrabarti, Q. K. K. Liu, Matthias Scheffler,  New J. Phys. 11, 073018 (2009).
    


11. "Theoretical prediction of shape memory behavior and ferrimagnetism in Mn2NiIn", Aparna Chakrabarti and S. R. Barman, Appl. Phys. Lett., 94, 161908 (2009).
    


12. The van der Waals coefficients between carbon nanostructures and small molecules : A time-dependent density functional theory study, C. Kamal, T. K. Ghanty, Arup Banerjee and Aparna Chakrabarti,  J. Chem. Phys. 131, 164708 (2009).
    


13. Electronic transport properties of Cu/MnOx/SiO2/p-Si MOS devices, V. K. Dixit, Koji Neishi and Junichi Koike, Mater. Res. Soc., D4.11, (2009).
    


14. Adhesion and Cu diffusion barrier properties of a MnOx barrier layer formed with thermal MOCVD.; Koji Neishi, V. K Dixit, Shiro Aki, Junichi Koike, Kenji Matsumoto, Hiroshi Sato, Hitoshi Itoh and Shigetoshi Hosaka, Mater. Res. Soc., D4.10, 2009.
    

2008

1. "An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for mid-IR lasers using simultaneous complementary spectroscopic techniques", T. K. Sharma, T. J. C. Hosea, S. J. Sweeney and X. Tang, J. Apply. Phys. 104, 083109 (2008).
   


2. "Room temperature observation of the energy levels of mid-infrared QW lasers by FTIR-SPS, T. K. Sharma, N. Fox and T. J. C. Hosea, G. R. Nash, S. D. Coomber, L. Buckle, M. T. Emeny and T. Ashley, Appl. Phys. Express, 1, 062001 (2008).
   


3. Microstructure of InN epilayers deposited in a close-coupled showerhead reactor, Tapas Ganguli, Abdul Kadir, Mahesh Gokhale, Ravi Kumar, A.P. Shah, B.M. Arora, Arnab Bhattacharya, J.Cryst.Growth, 310, 4942 (2008).
   


4. High optical quality ZnO epilayers grown on sapphire substrates by reactive magnetron sputtering of zinc target, Sukhvinder Singh, Ravi Kumar, Tapas Ganguli, R.S. Srinivasa, S.S. Major,  J.Cryst. Growth, 310, 4640 (2008).
   


5. Substrate temperature dependence of growth mode, microstructure and optical properties of highly oriented zinc oxide films deposited by reactive sputtering, Sukhvinder Singh, Tapas Ganguli, Ravi Kumar, R.S. Srinivasa, S.S. Major,  Thin Solid Films, 517, 661 (2008).
   


6. "Effect of two step growth process on structural, optical and electrical properties of MOVPE grown GaP/Si". V. K. Dixit, Tapas Ganguli, T. K. Sharma, S. D Singh, Ravi Kumar, S. Porwal,  Alka Ingale, Pragya Tiwari, and S. M. Oak, J. Crystal Growth, 310, 3428 (2008).
   


7. Optimization of the properties of MOVPE-grown GaP epitaxial layers on GaP (1 1 1) B substrates, T.K.Sharma, V.K.Dixit, Tapas Ganguli,  S.D.Singh, S.Porwal, Ravi Kumar and A.K.Nath,  Semiconductor Sci and Technol., 23, 075031 (2008).
   


8. Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target, Brajesh S. Yadav, Sukhvinder  Singh, Tapas  Ganguli, Ravi  Kumar, S. S.Major, R. S. Srinivasa. Thin Solid Films, 517, 488 (2008)
   


9. Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide”, Abdul Kadir, Sourin Mukhopadhyay, Tapas Ganguli, Charudatta Galande, M.R. Gokhale, B.M. Arora, Pratap Raychaudhuri and Arnab Bhattacharya, Solid State Communication, 146, 361, (2008).
   


10. Superconducting properties of nanocrystalline Nb3Al in Nb-Al matrix, Puspen Mondal, Meghmalhar Manekar, Ravi Kumar, Tapas Ganguli, and S. B. Roy, Appl. Phys. Lett., 92, 052507 (2008)
    


11. An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques, T. K. Sharma, T. J. C. Hosea, S. J. Sweeney, and X. Tang, J. Appl. Phys., 104, 083109 (2008)
    


12. Time-dependent density-functional-theory calculation of the van der Waals coefficient C6 of alkali-metal atoms Li, Na, K; alkali-metal dimers Li2, Na2, K2; sodium clusters Nan; and fullerene C60,Arup Banerjee, Jochen Autschbach, and Aparna Chakrabarti, Phys. Rev. A 78, 032704  (2008).
    


13. Ab initio study of properties of small potassium clusters, Arup Banerjee,  Tapan K. Ghanty, and , Aparna Chakrabarti, J. Phys. Chem. (A)  112, 12303  (2008).
    


14. Theoretical prediction and experimental study of a ferromagnetic shape memory alloy: Ga2MnNi,S. R. Barman, Aparna Chakrabarti, Sanjay Singh, S. Banik, S. Bhardwaj, P. L. Paulose, B. A. Chalke, A. K. Panda, A. Mitra, and A. M. Awasthi, Phys. Rev. B 78, 134406 (2008).
    


15. Electronic structure of - and -brass,R. S. Dhaka, S. Banik, A. K. Shukla, V. Vyas, Aparna Chakrabarti, S. R. Barman, B. L. Ahuja, and B. K. Sharma, Phys. Rev. B 78, 073107 (2008).
    


16. Magnetoresistance behavior of ferromagnetic shape memory alloy Ni1.75Mn1.25Ga,S. Banik, R. Rawat, P. K. Mukhopadhyay, B. L. Ahuja, Aparna Chakrabarti, P. L. Paulose, Sanjay Singh, Akhilesh Kumar Singh, D. Pandey, and S. R. Barman, Phys. Rev. B 77, 224417 (2008).
    


17. Comment on “Physical and electronic structure and magnetism of Mn2NiGa: Experiment and density-functional theory calculations”, S. R. Barman and Aparna Chakrabarti, Phys. Rev. B 77, 176401 (2008)
    

2007

1. A comparative study on nanotextured high density Mg-doped and undoped GaN ,  Suparna Pal,  Alka Ingale, V. K. Dixit, T. K. Sharma, S. Porwal, Pragya Tiwari, and A. K. Nath, J. of Appl. Phys. 101, 044311 (2007).
   


2. Micro Raman, photoluminescence spectroscopy of nano-porous n and p-type GaN grown on (0001) sapphire, Alka Ingale, Suparna Pal, V. K. Dixit, and P. Tiwari, Journal of Nanoscience and Nanotechnology 7, 1 (2007).
   


3. Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition, R.S. Ajimsha, K.A. Vanaja, M.K. Jayaraj, P. Misra, V. K.  Dixit, L.M. Kukreja, Thin Solid Film 515, 7352 (2007).
   


4. Electrical and optical characterization of photooxidized TPD S. Raj Mohan, M. P. Joshi, S. K. Tiwari, V. K. Dixit and T. S. Dhami, J. Mater. Chem., 17, 343 (2007).
   


5. Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor, Abdul Kadir, Tapas Ganguli, M.R. Gokhale, A.P. Shah, S.S. Chandvankar, B.M. Arora and Arnab Bhattacharya, J. Crystal Growth 298, 403 (2007).
   


6. Alloying induced degradation of the absorption edge of InAsxSb1-x Bhavtosh Bansal, V.  K.  Dixit, V. Venkataraman,  and H. L. Bhat, Appl. Phys. Letter 90, 101905 (2007).
   


7. Magnetic Compton scattering study of Ni2+xMn1−x Ga ferromagnetic shape-memory alloys, B. L. Ahuja, B. K. Sharma, S. Mathur, N. L. Heda, M. Itou, A. Andrejczuk, Y. Sakurai, Aparna Chakrabarti, S. Banik, A. M. Awasthi and S. R. Barman,Phys. Rev. B 75, 134403 (2007).
   


8. Magnetic and calorimetric investigations of ferromagnetic shape memory alloy Ni54Fe19Ga27,  V K Sharma, M K Chattopadhyay, Ravi Kumar, Tapas Ganguli, Rakesh Kaul, S Majumdar and S B Roy J. Phys. D: Appl. Phys. 40 3292 (2007).
   


9. Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200 nm, V.A. Kheraj, C.J. Panchal, P.K. Patel, B.M. Arora and T.K. Sharma, Optics & Laser Technology 39, 1395 (2007).
   


10. Spectroscopic investigations of MOVPE-grown InGaAs/GaAs quantum wells with low and high built-in strain, T. K. Sharma, S. D. Singh, S. Porwal, and A. K. Nath, J. Crystal Growth 298, 527 (2007).
    


11. Surface photovoltage and photoelectron spectra of GaP, Shailendra Kumar, , D.M. Phase, Sanjay Porwal and T.K. Sharma, Solid State Communication, 141, 284, (2007)
    


12. Time-dependent density functional theory calculation of van der Waals coefficient of sodium clusters, Arup Banerjee, Aparna Chakrabarti, and Tapan K. Ghanty, J. Chem. Phys. 127, 134103 (2007)
    


13. Martensitic transition, ferrimagnetism and Fermi surface nesting in Mn2NiGaS. R. Barman, S. Banik, A. K. Shukla, C. Kamal and Aparna Chakrabarti, Europhys. Lett., 80, 57002 (2007).
    


14. "Structural studies of  Ni2+xMn1−xGa  by powder x-ray diffraction and total energy calculations" S. Banik, R. Ranjan, A. Chakrabarti, S. Bhardwaj, N. P. Lalla, A. M. Awasthi, V. Sathe, D. M. Phase, P. K. Mukhopadhyay, D. Pandey, and S. R. Barman, Phys. Rev. B 75, 104107 (2007).
    

2006

1. Surface reconstructions and atomic ordering in InxGa1−xAs(001) films: A density-functional theory study Aparna Chakrabarti, Peter Kratzer and Matthias Scheffler, Phys. Rev. B 74, 245328 (2006).
   


2. Phase diagram and electronic structure of Ni2+xMn1−xGa S. Banik, Aparna Chakrabarti, U. Kumar, P. K. Mukhopadhyay, A. M. Awasthi, R. Ranjan, J. Schneider, B. L. Ahuja and S. R. Barman, ,Phys. Rev. B 74, 085110 (2006).
   


3. Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition, P. Misra, T. K. Sharma, S. Porwal, and L. M. Kukreja, Appl. Phys.Letter 89, 161912 (2006).
   


4. Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well, S. D. Singh, S. Porwal, T. K. Sharma, and K. C. Rustagi, J. Appl. Phys. 99, 063517 (2006).
   


5. Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing, V. K. Dixit, Tapas Ganguli, T. K. Sharma, Ravi Kumar, S. Porwal, Vijay Shukla , Alka Ingale, Pragya Tiwari, and A. K. Nath, Journal of Crystal Growth 293, 5 (2006).
   


6. Effect of excess plasma on photoelectron spectra of nanoporous GaP, V. K. Dixit, Shailendra Kumar, C. Mukherjee, Shilpa Tripathi, Anupam Sharma, Ranjeet Brajpuriya and S.M. Chaudhari Appl. Phys. Lett .88, 083115 (2006).
   


7. “In-Situ Reflectivity Measurement for Anti-Reflection Coating on Laser Diode Facet”, Chetan Panchal, Vipul Kheraj, Pravin Patel, Krunal Pandya and T. K. Sharma, Proc. SPIE Vol No. 6286, 62860H, Advances in Thin-Film Coatings for Optical Applications III; Michael J. Ellison (Ed.), August 2006.
   

2005

1. Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 mm, T. K. Sharma, M. Zorn, U. Zeimer, H. Kissel, F. Bugge, and M. Weyers, Crystal Research & Technology 40, 877 (2005).
   


2. Influence of Ni-doping on the electronic structure of Ni2MnGa, Aparna Chakrabarti, C. Biswas, S. Banik, R. S. Dhaka, A. K. Shukla, S. R. Barman, Phys. Rev. B72, 073103 (2005).
   


3. Structural and electronic properties of Ni2MnGa, S. R. Barman, S. Banik and Aparna Chakrabarti, Phys. Rev. B 72, 184410 (2005).
   


4. Surfactant favored disorder in (001)-oriented CuPt-ordered III-V-V alloy thin-films: Action of Sb and Bi, Aparna Chakrabarti and Karel Kunc, Phys. Rev. B, 72, 045342 (2005).
   


5. Phosphorous passivation of In0.53Ga0.47As using MOVPE and characterization of Au-Ga2O3(Gd2O3)-In0.53Ga0.47As MIS capacitor, S. Pal, S.M. Shivaprasad, Y. Aparna and B.R. Chakraborty, Applied Surface Science, Vol. 245 (1-4), 2005.
   


6. “Effect of facet reflectivities on high-power highly strained InGaAs quantum-well diode lasers operating at 1.2 μm”, C. J. Panchal, V. A. Kheraj, K. M. Patel, P. K. Patel, B. M. Arora, T. K. Sharma, Proc. SPIE Vol. 6028, p. 35-41, ICO20: Lasers and Laser Technologies; Y. C. Chen, Dianyuan Fan, Chunqing Gao, Shouhuan Zhou; Eds., Dec 2005.
   

2004

1. Effect of strain on atomic ordering and action of surfactants in ternary alloy thin films, Aparna Chakrabarti and Karel Kunc, Phys. Rev. B 70, 085313 (2004).
   


2. Argon Nanobubbles in Al(111) : a Photoemission Study, C. Biswas, A. K. Shukla, S. Banik, S. R. Barman and Aparna Chakrabarti, Phys. Rev. Lett. 92, 115506, (2004).
   


3. Studies on high resolution x-ray diffraction, optical and transport properties of InAsxSb1-x/GaAs (x0.06) heterostructure grown using liquid phase epitaxy, V. K. Dixit, Bhavtosh Bansal, V. Venkataraman, H. L. Bhat, K. S. Chandrasekharan, and B. M. Arora, Journal of Applied Physics 96, 4989 (2004).
   


4. Transport, optical and magneto-transport properties of hetero-epitaxial InAsxSb1-x(x£0.06) and bulk InAsxSb1-x (x£0.05) crystals: experiment and theoretical analysis, Bhavtosh Bansal,  V. K. Dixit, V. Venkataraman and H.L.Bhat, Physica E, 20, 272 (2004).
   


5. Effect of Oxygen Pressure During Pulsed Laser Deposition of TiO2 on the MTOS (Metal-TiO2-SiO2-Si) Capacitor Characteristics, R. Paily, A. DasGupta, N.DasGupta, T.Ganguli and L. M. Kukreja, Thin Solid Films, 462-463, 57 (2004)
   


6. Valence bands offset between depleted semiconductors measured by photoelectron spectroscopy, Shailendra Kumar, S. N. Jha, Jagannath, Tapas Ganguli, S. V. N. Bhaskara Rao and N. C. Das, Applied Surface Science 229, 324 (2004).
   

2003

1. Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05 Sb0.95 single crystals, Bhavtosh Bansal, V. K. Dixit, V. Venkataraman and H.L.Bhat, Applied Physics Letter 82, 4720 (2003).
   


2. Microwave plasma oxidation of GaN, S. Pal, S. M. Shivaprasad, B. R. Chakraborty, S. K. Ray, S. K. Lahiri, and D. N. Bose, Thin Solid Films 425 ,  (2003).
   


3. Structural and Surface compositional analysis of InBixAsySb1-x-y  films grown on GaAs(001) substrates using Liquid Phase Epitaxy, V. K. Dixit, K. S. Keerthi, Parthasarthi Bera, M. S. Hegede and H.L.Bhat,  Applied Surface Science 220, 321 (2003).
   


4. Crystal growth and characterization of new nonlinear optical material : Urea L-Malic Acid, V. K. Dixit, S. Vanishri, H. L. Bhat,  E. de Matos Gomes M. Belsley, C. Santinha, G. arunmozhi, V. Venkataraman, F. Proena, A. Criado., Journal of Crystal Growth 253, 460 (2003).
   


5. Atomic ordering in InGaAs alloy thin films: Action of surfactants, Aparna Chakrabarti and Karel Kunc, Phys. Rev. B, 68, 045304 (2003).
   


6. Highly strained very high-power laser diodes with InGaAs QWs, F. Bugge. M. Zorn, U. Zeimer, T. Sharma, H. Kissel, R. Huelsewede, G. Erbert, M. Weyers, J. Crystal Growth 248, 354 (2003).
   

2002

1. Frequency and Intensity dependence of the sub band gap features observed in the SPV spectrum of SI-GaAs, T. K. Sharma, Shailendra Kumar and K. C. Rustagi, J. Appl. Phys. 92, 5959 (2002).
   


2. Effect of growth temperature on strain barrier for MOVPE grown strained InGaAs quantum well with lattice matched InGaAsP barriers, T. K. Sharma, B. M. Arora, S. Kumar and M. R. Gokhale, J. Appl. Phys.91, 5875 (2002).
   


3. Absorption edge determination of thick GaAs wafers using surface photovoltage spectroscopy, T. K. Sharma, S. Porwal, R. Kumar and S. Kumar, Rev. Sci. Inst. 73, 1835 (2002).
   


4. High power highly strained InGaAs quantum well lasers operating at 1.2 nm, T. K. Sharma, M. Zorn, U. Zeimer, H. Kiessel, F. Bugge and M. Weyers, IEEE Photon. Technol. Lett. 14, 887 (2002)
   


5. SIMS characterization of GaAs MIS devices at the interface, B. R. Chakraborty, Nita Dilawar, S. Pal, and D. N. Bose, Thin Solid Films 240, 411 (2002).
   


6. Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma assisted pulsed laser deposition, P. Bhattacharya, T. K. Sharma, S. Singh, Alka Ingale and L.M. Kukreja, J. Crystal Growth, 236, 5 (2002).
   


7. Surface photovoltage spectroscopic study of undoped ZnSe/n+GaAs grown by    Pulsed laser Deposition, Tapas Ganguli, Shailendra Kumar, L.M.Kukreja and K.C.Rustagi, Journal of Physics, Condensed Matter. 14, 1813 (2002).
   


8. Structural, Optical and Electrical properties of Bulk Single crystals of InAsxSb1-x grown by Rotatory Bridgman Method, V. K. Dixit, Bhavtosh Bansal, V. Venkataraman and H.L.Bhat, Applied Physics Letter 81,1630 (2002).
   


9. High mobility InSb epitaxial films grown on GaAs substrate using Liquid Phase Epitaxy, V. K. Dixit, Bhavtosh Bansal, V. Venkataraman, G. N. Subbanna, K. S. Chandrasekharan, B. M.  Arora and H.L.Bhat, Applied Physics Letter 80, 2102 (2002).
   


10. Growth of InSb epitaxial films on GaAs (001) substrates by LPE and their structural Characterization, V. K. Dixit, B.V Rodrigues, R. Venkataraghavan, K. S. Chandrasekharan, B. M. Arora and H.L.Bhat, Journal of Crystal Growth, 235, 154 (2002).
    


11. Growth of InBixSb1-x  epitaxial films on GaAs ( 001 ) substrates by LPE and their structural  Characterization, V. K. Dixit, K. S. Keerthi, Parthasarthi Bera and H.L.Bhat, Journal of Crystal Growth, 241, 171 (2002).
    

2001

1. Surface photovoltage spectroscopy of semi-insulating GaAs in the 800nm-1100nm range, T. K. Sharma and S. Kumar, Appl. Phys. Lett.79, 1715 (2001).
   


2. Crystalline quality of ZnSe thin films grown on GaAs by Pulsed Laser Deposition in He and Ar ambients, Tapas Ganguli, Pijush Bhattacharya, L.M.Kukreja, K.C.Rustagi, K.S.Chandrashekharan and B.M.Arora, Thin Solid Films, 388, 189 (2001).
   


3. Effect of Lithium ion irradiation on transport and optical properties of Bridgman grown n-InSb single crystals, V. K. Dixit, B.V Rodrigues , R. Venkataraghavan, K. S. Chandrasekharan, B. M . Arora and H.L.Bhat, Journal of Applied Physics, 90, 1750 (2001).
   


4. Electronic structure of vanadium dioxide : Ab initio density functional theory studies of periodic and local systems,  K. Hermann, Aparna Chakrabarti, A. Haras, M. Witko and B. Tepper,  Physica Status Solidi A, 187, 137 (2001).
   


5. Experimental setup for rapid crystallization using favoured chemical potential and hydrodynamic conditions, V. K. Dixit, B.V Rodrigues and H.L.Bhat, Bulitien of Materials Science, 24, 455 (2001).
   

2000

1. Growth of InBixSb1-x crystals by Rotatary Bridgman method and their characterization, V. K. Dixit, B.V Rodrigues and H.L.Bhat, Journal of Crystal Growth, 217, 40 (2000).
   


2. Role of nickel arsenide phase in pressure induced structural phase transitions in IIA-VI chalcogenides, Aparna Chakrabarti, Phys. Rev. B, 62, 1806, (2000).
   


3. Systematic Theoretical Studies, NATO Science Series, Metal Ligand interactions in Chemistry, Physics and Biology M. Witko, K. Hermann, R. Tokarz, R. Druzinic and Aparna Chakrabarti, Electronic Structure of Vanadia Systems:, edited by N. Russo and D. R. Salahub, Kluwer Academic Publishers, Dordrecht, 417-438 (2000)
   


4. Characterization of InGaP/GaAs heterointerfaces Grown by Metal Organic Vapour Phase Epitaxy, T. K. Sharma, B. M. Arora, M. R. Gokhale and S. Rajgopalan, J. Crystal Growth, 221, 509 (2000).
   


5. Long wavelength photoluminescence from InGaP/GaAs heterointerfaces grown by metal organic vapor phase epitaxy, T. K. Sharma, M. R. Gokhale and B. M. Arora, J. Cryst. Growth 213, 241 (2000).
   


6. Indium Thallium Phosphide: experiments versus predictions, S. S. Chandvankar, T. K. Sharma, A. P. Shah, K. S. Chandrasekaran, B. M. Arora, A. K. Kapoor, Devendra Verma and B. B. Sharma, J. Cryst.Growth 213, 249 (2000).
   

1999

1. “Short interval open tube Zn diffusion in GaAs at low temperatures”, T. K. Sharma, A. P. Shah, M. R. Gokhale, C. J. Panchal and B. M. Arora, Semicond. Sci. Technol. 14, 327 (1999).
   


2. "Raman and Photoluminescence investigations of disorder in ZnSe films deposited on n-GaAs", Tapas Ganguli and Alka Ingale, Physical Review B, 60, 11618 (1999).
   


3. Geometric and electronic structure of Vanadium pentoxide: A density functional study, Aparna Chakrabarti, K. Hermann, R. Druzinic, M. Witko, F. Wagner and Petersen, Phys. Rev. B, 59, 10583 (1999).
   


4. Properties and Identifications of Oxygen sites at the V2O5 (010) Surface: Theoretical Cluster Studies and Photoemission Experiments, K. Hermann, M. Witko, R. Druzinic, Aparna Chakrabarti, B. Tepper, M. Elsner, A. Gorschueter, H. Kuhlenbeck and H.J. Freund, J. of Electron Spectro. and Related Phenom., 98-99, 245 (1999)
   


5. Ab-initio density functional theory studies of hydrogen adsorption at the V2O5 (010) surface,  K. Hermann, Aparna Chakrabarti, R. Druzinic, and M. Witko,  Physica Status Solidi A, 173, 195 (1999)
   


6. Theory of even parity states in polyphenylenes,  Aparna Chakrabarti  and S. Mazumdar, Phys. Rev. B, 59, 4839 (1999).
   

1998

1. Exciton-Exciton interactions in molecular dye aggregates, Aparna Chakrabarti, A. Schmidt, V. S. Valencia, B. Fluegel, S. Mazumdar, N. R. Armstrong and N. Peyghambarian,  Phys. Rev. B, 57, R4206 (1998).
   


2. Ring currents in  condensed ring systems, Y. Anusooya, Aparna Chakrabarti, Swapan K. Pati and S. Ramasesha, Intl. J. Quant. Chem., 70, 503 (1998)
   


3. "Polarization anisotropy of sub band gap oscillatory features in contactless electroreflectance spectrum of InxGa1-xP layers grown on GaAs (001) substrates", Sandip Ghosh, B. M. Arora, T. K. Sharma and M. R. Gokhale, J. Appl. Phys. 83, 5442 (1998).
   


4. "Metal organic vapour phase epitaxy of III-V compound semiconductors", B. M. Arora, T. K. Sharma, M. R. Gokhale and A. P. Shah, (Review article), IVS Bulletin 1, 3 (1998).
   


5. "Surface Photovltage Spectroscopy of n-n+ and p-n+ AlGaAs/GaAs heterojunctions", Shalendra Kumar, Tapas Ganguli, Pijush bhattacharya, U.N.Roy S.S.Chandvankar and B.M.Arora, Applied Physics Letters, 72, 3020 (1998).
   

1997

1. "Structure and composition of Pulsed Laser Deposited ZnSe films", Tapas Ganguli, B.L.Dashora, P.Bhattacharya, L.M.Kukreja, P.Bhatnagar, H.S.Rawat, M.Lal and Ajay Gupta, Solid State Phenomena, 55, 59 (1997).
   


2. Essential excitations in phenylene-based conjugated polymers,  Aparna Chakrabarti and S. Mazumdar,  Synth Metals, 85, 1121 (1997).
   

1996

1. Low-lying states of Phenanthrene : exact PPP results, Aparna Chakrabarti and S. Ramasesha, Intl. J. Quant. Chem., 60, 381 (1996)
   


2. Properties of the correlated electronic states of Pyrene and hydrogenated Pyrene, Aparna Chakrabarti,  Y. Anusooya and S. Ramasesha, Mol. Phys.,  89, 1019 (1996)
   


3. Approximate MO-VB studies on various  C60 fragments,  Aparna Chakrabarti, Y. Anusooya and S. Ramasesha,  J. Mol. Struct. (Theochem.), 361, 181 (1996).
   

1995

1. A Monte Carlo study of condensed phases of biphenyl, Aparna Chakrabarti, S. Yashonath and C. N. R. Rao, Mol. Phys., 84, 49 (1995).
   

1994

1. Comparison of positional disorder in the liquid and glassy states of hydrocarbons: dependence of disorder on molecular shape,  Aparna Chakrabarti, S. Yashonath and C. N. R. Rao, Mol. Phys. 81, 467 (1994).
   

1993

1. Orientational glassy phases of C60 : A Monte Carlo study, Aparna Chakrabarti, S.Yashonath, C. N. R. Rao, Chem. Phys. Lett. 215, 591 (1993).
   


2. A Monte Carlo study of liquid and glassy states of 2,2--dimethylbutane, Aparna Chakrabarti, S. Yashonath and C. N. R. Rao, J. Mol. Liq.  57, 177 (1993)
   

1992

1. Importance of orientational rearrangement during vitrification of hydrocarbons : dependence on molecular shape,  Aparna Chakrabarti, S. Yashonath, C. N. R. Rao, J. Phys. Chem.  96, 6762 (1992).
   

Publication in Conference Proceedings

2010

1. “Effect of 60Co γ ray irradiation on Electrical characteristics of MOVPE grown GaAs epilayer and p-i-n detectors”, Shailesh K. Khamari1, V.K.Dixit, T. Ganguli, S. Porwal, S. D. Singh, Sanjay Kher and S. M. Oak,  "National Symposium on Nuclear Instruments (NSNI-10), BARC from 24th to 26th Feb 2010.
   

2009

1. Proceedings of the 54th DAE Solid State Physics Symposium (2009), R. Aggarwal, Alka A. Ingale, Suparna Pal, T. K. Sharma, S. C. Mehnedale and S. M. Oak, 14-18 Dec, 2009, Vadodara.
   


2. ”Development of cw Semiconductor Lasers at RRCAT”, DAE-BRNS National Laser Symposium (NLS-08) Tapas Ganguli, T.K. Sharma, V. K. Dixit, S. Pal, S. D. Singh, R. Jangir, S. Khamari, S. Porwal, R. Kumar, A. Khakha, S. M. Oak, C. Mukherjee, P. Tiwari, G. S. Saravanan, S. Bhalke and R. Muralidharan, 7-10 Jan 2009, LASTECH Delhi, India.
   


3. “Optical and structural characterization of heteroepitaxial InP layers on GaAs substrate grown by metal organic vapour phase epitaxy” S. D. Singh, T. K. Sharma, Tapas Ganguli, S. Porwal, Ravi Kumar, V. K. Dixit, and S. M. Oak, , DAE-BRNS National Laser Symposium (NLS-08), 7-10 Jan 2009, LASTECH Delhi, India.
   


4. Automated Lifetime Measurement Facility for Laser Diodes” G. G. Bhatt, V. A. Kheraj, C. J. Panchal and T. K. Sharma, “, DAE-BRNS National Laser Symposium (NLS-08), 7-10 Jan 2009, LASTECH Delhi, India.
   


5. “Investigation on Cu/MnOx/SiO2 for Advanced LSI interconnect applications” V. K. Dixit, Koji Neishi and Junichi Koike, Tohoku-NTU workshop on materials integration for health, energy and better environment (9-12 Feb. 2009), Japan
   


6. “Synthesis and characterization of gallium oxide cone-like nano structures grown on GaAs wafer” by  R. Jangir, Suparna Pal, Tapas Ganguli, S. Porwal, C. Mukherjee, S. K. Rai, P. Misra,  L. M. Kukreja and S. M. Oak  54rd DAE Solid State Physics Symposium, Vadodara, Dec. 14-18, 2009.
   

2008

1.  “Studies on GaAs based P-I-N diode structures grown using MOVPE” S. K. Khamari, V. K. Dixit, R. Kumar, S. D. Singh, T. K. Sharma, P. Tiwari and S. M. Oak, , Proc. Of 53rd DAE-SSPS, Dec 16-20, 2008, BARC, Mumbai, India.
   


2. “The electrical properties of Cu/MnOx/MnSixOy/SiOx/p-Si/Al metal–oxide semiconductor devices” V. K. Dixit, Koji Neishi and Junichi Koike, Presented at “KINKEN-WAKATE 2008 5th Materials Science School for Young Scientists”. (Dec. 4-5, 2008), Japan.
   


3. Optical and electrical properties of e-beam deposited SiO2 films for applications in diode lasers. C. Mukherjee, V. K. Dixit, K. Rajiv, N. Kumar, S.K. Khamari, T.K. Sharma, T. Ganguly, S. Pal, R. Jangir, S. M. Oak and J.K. Mittal, Photonics Dec.,2008, New Delhi, India
   


4. “V-Groove fabrication on n+ -GaAs using photolithography and chemical etching”  Ravindra Jangir, Suparna Pal, Anita Sharma, T. K. Sharma, K. Alexander, Pragya Tiwari, C. Mukherji, and S. M. Oak  53rd DAE Solid State Physics Symposium, Mumbai, Dec. 16-20, 2008.
   

2007

1. “Development of red laser diodes utilizing MOVPE grown InGaP quantum wells” T. K. Sharma,  Palika Rawat, V. K. Dixit, Tapas Ganguli, R. Jangir, S. Pal, S. Porwal, Ravi Kumar, Alexander Khakha, Vipul Kheraj, S. D. Singh and S. M. Oak,  Proc. DAE-BRNS National Laser Symposium, Univ. of Baroda, Vadodara, Dec 17-20, India (2007).
   


2.  “Impact of growth parameters on structural and optical properties of InP/GaAs type-II quantum
   dots grown by metal organic vapour phase epitaxy” S. D. Singh, T. K. Sharma, S. Porwal, C. Mukherjee and S. M. Oak, “, Proc. XIV Int. Workshop on Physics of Semiconductor Devices, IIT Mumbai, India,  Dec 16-20, 2007, pages 439, 2007.
   


3.  “Comparative Studies on As-grown and Nanotextured GaN:Mg Epilayer” S. Pal, A. Ingale, V. K. Dixit, T. Ganguli, T. K. Sharma, S. Porwal, R. Kumar and S. M. Oak, “, Proc. XIV Int. Workshop on Physics of Semiconductor Devices, IIT Mumbai, India,  Dec 16-20, 2007, pages 419, 2007.
   


4.  “Studies on GaAs/AlGaAs based (p and n-type) quantum well infrared photodetector structures grown using metal organic vapour phase epitaxy” V. K. Dixit, S. D. Singh, T. K. Sharma, Tapas Ganguli, Suparna Pal, B. Q. Khattak and S. M. Oak, , Proc. XIV Int. Workshop on Physics of Semiconductor Devices, IIT Mumbai, India, Dec 16-20, 2007, pages 355, 2007.
   


5. Two step growth process of GaP epitaxial layer grown on n-type Si (001) using MOVPE V. K. Dixit, Tapas Ganguli, T. K. Sharma, S. D. Singh , Ravi Kumar, S. Porwal, Pragya Tiwari, Alka Ingale and S. M. Oak Presented at IUMRS-ICAM, held at IISc, Bangalore, India (2007).
   


6. “PHOTOLUMINESCENCE FROM ULTRA-THIN ZnO/ZnMgO QUANTUM WELLS”, P. Misra, T. K. Sharma, G. M. Prinz, K. Thonke and L. M. Kukreja Presented at IUMRS-ICAM, IISC, Bangalore, India (2007)
   


7.  Effect of temperature on photoluminscene of Nd doped PLZT, Gurvinderjit Singh, V. S. Tiwari, T. K. Sharma and P. K. Gupta, presented at DAE-SSPS, India (2007)
   

2006

1. “Mosaic structure of heteroepitaxial InP/Si analyzed by high resolution x-ray diffraction”, S. D. Singh, Tapas Ganguli, Ravi Kumar, V. K. Dixit, S. Porwal, T. K. Sharma, Himanshu Shrivastava, and A. K. Nath, Eighth International Conference on Optoelectronics, Fiber Optics and Photonics, Unversity of Hyderabad, India, 13-16 December, 2006, PMD-25.
   


2. “Improved transport and injection of holes using photo-oxidized TPD”, M. P. Joshi, S. Raj Mohan, V. K. Dixit and T. S. Dhami. Eight International Conference on Optoelectronics, Fiber Optics and Photonics held at University of Hyderabad during 13-16 Dec. 2006.
   


3. “Improved transport and injection of holes using photo-oxidized TPD” M. P. Joshi, S. Raj Mohan, V. K. Dixit and T. S. Dhami. Eight International Conference on Optoelectronics, Fiber Optics and Photonics held at University of Hyderabad during 13-16 Dec. 2006.
   


4. "Transport properties of two dimensional electron gas for Al0.4Ga0.6As/GaAs heterojunction" V. K. Dixit, T. K. Sharma, Tapas Ganguli, S. D. Singh, Ravi Kumar, S. Porwal and A.K. Nath  Biswajit Karmakar, A. P. Shah and B. M. Arora. 51st DAE-SSPS, 26-30 Dec. 2006, Bhopal.
   


5. "Bulk and thin film growth of pure and substituted indium antimonide for infrared detector applications.” V. K. Dixit, Material Research Society of India held in Lucknow, 13th Feb. 2006, India (G C Jain memorial prize lecture).
   


6. "Processing of high power laser diode structures using photolithography and lift-off techniques”, Suparna Pal, V. K. Dixit, S. D. Singh, Tapas Ganguli, Ravi Kumar, S. Porwal, K. Alexander, Palika Rawat, T. K. Sharma and A. K. Nath, National Laser Symposium, 5-8 December, 2006, RRCAT, Indore.
   


7. "Laser diode processing using shadow mask techniques: A quick turn around method”, V. K. Dixit, Tapas Ganguli, S. D. Singh, S. Pal, Ravi Kumar, K. Alexander, A. Kuruvilla, B. N. Upadhyay, T. K. Sharma and A. K. Nath, National Laser Symposium, 5-8 December, 2006, RRCAT, Indore.
   


8. "Studies on carrier doping of laser diode structures grown using MOVPE”, V. K. Dixit, Tapas Ganguli, S. D. Singh, S. Pal, Ravi Kumar, S. Porwal, K. Alexander, T. K. Sharma and A. K. Nath, National Laser Symposium, 5-8 December, 2006, RRCAT, Indore.
   


9. “A photoluminescence study of heteroepitaxial InP layers on Si substrate grown by metal organic vapour phase epitaxy”, S. D. Singh, T. K. Shrama, Tapas Ganguli, V. K. Dixit, S. Porwal, Ravi Kumar, and A. K. Nath, Proceedings of 6th DAE-BRNS National Laser Symposium, RRCAT Indore, India, 5-8 December, 2006, p. 168.
   


10. "Development of high-power laser at RRCAT”, T. K. Sharma, Tapas Ganguli, V. K. Dixit, S. D. Singh, Suparna Pal, Sanjay Porwal, Ravi Kumar, K. Alexander, R. Jangir, V. Kheraj, Palika Rawat.
    


11. "Raman spectroscopy and structure: nano-porous GaP", Alka Ingale, V. K. Dixit, Vijay Shukla and C. Mukherjee. International conference on Raman Spectroscopy 3P-98, 20-25th  August 2006
    

2005

1. "Structural, optical and electrical characterization of epitaxial gallium phosphide layer grown on n type Si(001) substrate using metal organic vapor phase epitaxy”, V. K. Dixit, Tapas Ganguli, T. K. Sharma, Vijay Shukla, Ravi Kumar and Alka Ingale presented in Thirteenth International Workshop on the Physics of Semiconductor Devices, NPL Delhi, December 2005, India.
   


2. "Detailed Investigations on transport, optical and x-ray scattering of epitaxial GaAs (undoped and Zn doped) layers grown on SI-GaAs using metal organic vapor phase epitaxy”, V. K. Dixit, T. K. Sharma, Tapas Ganguli, S. D. Singh, Sanjay Porwal and Ravi Kumar, Presented in 50th DAE-SSPS, December 2005, BARC, Mumbai, India
   


3. "Optical and Electrical properties of as grown and annealed oriented CdS thin films”, Vijay Shukla, V. K. Dixit,  Alka Ingale Presented in 50th DAE-SSPS, December 2005, BARC, Mumbai, India
   


4. “MOVPE growth of nanostructures based on InAs and InGaP”, T. K. Sharma, S. D. Singh, S. Porwal, and C. Mukherjee, Proceedings of the XIII International Workshop on Physics of Semiconductor Devices, SSPL, New Delhi, India, 13–17 December, 2005, p. 1208.
   


5. “Optimization of the MOVPE growth of GaP epitaxial layers on GaP (111)B substrates”, T. K. Sharma, V. K. Dixit, Tapas Ganguli, S. D. Singh, S. Porwal, R. Kumar, XIII International Workshop on the Physics of Semiconductor Devices, NPL Delhi, India, 13-17 December 2005.
   


6. "Detection of highest bandgap alloy composition present in InxGa1-xAs with variation in composition using surface photovoltage spectroscopy”, Pal Suparna, Ganguli Tapas, Sharma T.K., Porwal S., Kumar Ravi, Kumar Shailendra, Gokhale M.R., Arora B.M. pp. 1523, Proc. of the XIII Int. Workshop on Physics of Semiconductor Devices, December, 13-17, 2005, NPL Delhi, India
   


7. III-V Semiconductors, Synthesis, Characterizations and device applications, T. K. Sharma, National workshop on optoelectronic and photonic Materials, North-Maharashtra University, Jalgaon, India, March 31, 2005 (Invited).
   


8. “InAsSb/GaAs heteroepitaxial crystals studies by cyclotron resonance measurements”, O. Drachenko, B. Bansal, V. Rylkov, V. K. Dixit, J. Gilbert and J. Leotin, Presented in 12th International conference on narrow band gap semiconductors page 70, July 3-7, 2005, Taulouse, France.
   


9. “Optical and Electrical Characteristics of Lithium Doped Zinc Oxide Thin Films Grown By Pulsed Laser Deposition”, N. Bodas, B. N. Singh, Ravi Kumar,V. K. Dixit, P. Misra and L. M.  Kukreja, Presented in international conference on pulsed laser deposition India 2005.
   

2004

1. “Microwave plasma oxidation of GaN”, S. Pal, R. Mahapatra, S. K. Ray, B. R. Chakraborty, S. M. Shivaprasad, S. K. Lahiri, and D. N. Bose, International symposium on Advanced Material and Processing, 6-8 Dec. 2004, Vol. II, PP. 1116-1121.
   


2. “Growth of InSb thin film by temperature gradient vapour phase epitaxy”, K. Ganesan, K. S. Keerthi, V. K. Dixit, and H.L.Bhat, ICCGE-14 / ICVGE-12 held in France during August 2004.
   


3. “PL characterization of InGaAs epilayers grown on InP and surface passivation by surfer treatment”, K. S. R. K. Rao, V. K. Dixit, Suparna Pal et al., Photonics 2004, P2.50 OMD-P50.
   

2003

1. "Novel gate dielectrics for nanoscale semiconductor devices", D.N.Bose, S. Pal, S.K.Ray and B.R.Chakraborty, National Seminar on Science & Technology of Nanomaterials, 2003.
   


2. “Design and development of temperature gradient vapor phase epitaxy system for the growth of InSb heterostructures”, V. K. Dixit, K. Ganeshan, K. S. Keerthi, and H.L.Bhat, Twelfth International Workshop on the Physics of Semiconductor Devices, 2003, India.
   


3. “Bulk and thin film growth of pure and substituted Indium Antimonide”, V.K.Dixit and H.L.Bhat, presented in the Twelfth International Workshop on the Physics of Semiconductor Devices, 2003, India.
   


4. “Transport, Optical and Magneto-transport properties of Hetero-epitaxial InAsxSb1-x/GaAs and Bulk InAsxSb1-x (x £ .06) Crystals: Experiment and Theoretical Analysis”, Bhavtosh Bansal, V. K. Dixit, V. Venkataraman and H. L. Bhat, 11th International Conference on Narrow Gap Semiconductors, Buffalo, New York, June 2003 U.S.A,
   


5. “UreaL-MalicAcid”, A potential nonlinear optical crystal”, V.K.Dixit, S. Vanishri, H. L. Bhat, E. de Matos Gomes M. Belsley, C. Santinha, G. Arunmozhi, V. Venkataraman, F. Proena, A. Criado, National Laser Symposium October 2003, India.
   


6. “Characterization of InGaAsP epitaxial layers grown by MOVPE near the miscibility gap”, T. K. Sharma, S. D. Singh, S. Porwal, A. Knauer, U. Zeimer, H. Kissel, M. Weyers and K. C. Rustagi, International Workshop on Physics of semiconductor Devices, 16-20 December 2003, IIT, Chennai, India.
   

2002

1. “SPS characterization of MOVPE grown highly starined InGaAs quantum wells emitting beyond 1.2 nm”, T. K. Sharma, M. Zorn, F. Bugge, U. Zeimer, H. Kissel and M. Weyers, International Conf. on Fiber Optics & Photonics, Dec 2002, TIFR Mumbai, India.
   


2. “Structural, Optical, and electrical properties of InAsxSb1-x (x £ .06)  films grown on semi-insulating GaAs(001) substrate using Liquid Phase Epitaxy”, V. K. Dixit,  Bhavtosh Bansal, V. Venkataraman, K. S. Chandrasekharan, B. M . Arora and H. L. Bhat, Photonics 2002 held in TIFR Mumbai, during December 16-18, 2002,  India
   


3. “Structural, Optical, and electrical Characterization of InSb/GaAs Films grown by liquid phase epitaxy”, V.K.Dixit, R. Venkataraghavan, K. S. Chandrasekharan, B.M.Arora and H.L.Bhat, Material Research Society of India (MRSI) held in Hydrabad, 13th Feb. 2002, India
   


4. “High mobility and 9.5µm Cut-off wavelength InAsxSb1-x (x £ .06) films grown on GaAs(001) substrate using Liquid Phase Epitaxy”, V. K. Dixit, Bhavtosh Bansal, V. Venkataraman and H.L.Bhat, 44th Electronic Material Conference, TMS, University of California, Santa Barbara, CA June 26-28, 2002 USA.
   

2001

1. “Frequency dependent surface photovoltage spectroscopy of single crystal GaAs”, T.K. Sharma, and S. Kumar, Proc. Int.,Workshop Prep. & Charact. Tech. Imp. Single Crystals, National Physical Laboratory, New Delhi, 289-292(2001).
   


2. “Growth of InSb epitaxial films on GaAs (001) substrates by LPE and their structural characterization”, V. K. Dixit, B. V Rodrigues, R. Venkataraghavan, K. S. Chandrasekharan, B. M . Arora and H.L.Bhat, ICCGE-13 / ICVGE-11 30th July –4th August 2001 Japan.
   


3. “Crystal growth and Characterization of New Nonlinear Optical Material : Urea L-malic Acid.”, V.K.Dixit, E. de Matos Gomes and H.L.Bhat,  ACCGE-13, 12-16th August 2001, USA.
   


4. “Structure and Electrical properties of InSb/GaAs (001) grown by Liquid Phase Epitaxy”, V.K.Dixit, B.V Rodrigues, R. Venkataraghavan, K. S. Chandrasekharan, B. M . Arora and H.L.Bhat,  ICMAT-2001 1st to 6th July, 2001 Singapore
   


5. “Growth of high quality InSb/GaAs heterostructure by LPE and their structural, optical and electrical characterization”, V.K.Dixit, Bhavtosh Bansal, V.Venkataraman, K.S. Chandrasekharan, B.M.Arora and H.L.Bhat, presented in National Symposium on Vaccum Science and Technology ( IVSNS – 2001 ) held in IISc Bangalore during 5th –7th September 2001
   

2000

1. “Optical Characterization of InGaAs Strained Single Quantum Well with InGaAsP Quaternary Barriers”, T. K. Sharma, B. M. Arora, Shailendra Kumar and M. R. Gokhale  Proc. DAE-SSPS-2000,  
   


2. “Characterization of InGaP/GaAs heterointerfaces Grown by Metal Organic Vapour Phase Epitaxy”, T. K. Sharma, B. M. Arora and S. Rajgopalan, presented at ICMOVPE – X, June 4-9, 2000, Sapporo, Japan.
   


3. "Raman Lineshape analysis of LO ZnSe mode close to Eo gap resonance", Tapas Ganguli, Alka Ingale, P.Bhattacharya, L.M.Kukreja and K.C.Rustagi. Accepted at DAE Solid State Physics Symposium Dec 2000.
   


4. "Effect of Lithium ion irradiation on transport and optical properties of Bridgman grown n-InSb single crystals", V. K. Dixit, B.V Rodrigues and H.L.Bhat, 1st Asian Conference on Crystal Growth and Crystal Technology (CGCT), Aug 29-Sept 1 2000, Sendai, Japan.
   


5. "Influence of optimised growth parameters on quality of InSb/GaAs films using LPE technique", V.K.Dixit, B.V Rodrigues and H.L.Bhat,  presented in 70th annual session of the National Academy of Sciences Allahabad , October -2000, India
   


6. "Development of a Rotatory Bridgman unit to grow InSb(1-x)Bix crystals", V.K.Dixit, B.V Rodrigues and H.L.Bhat, Silver Jubilee National Symposium on Instrumentation 8-11, November-2000, IISc, Bangalore, India
   


7. Fabrication and characterization of n-GaAs MIS structures, S. Pal and D. N. Bose, International Conference on Communications, Computers & Devices (ICCCD), 2000.
   


8.  “Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe - a comparative study”, S. Pal, S. K. Ray, S. K. Lahiri and D. N. Bose, Proceedings of International Workshop on the Physics of Semiconductor Devices, vol. 2, pp. 1174. 2000
   


9.  “Fabrication and Characterization of GaAs MIS Devices with N-rich PECVD SixNy Dielectrics”, D. N. Bose and S. Pal, Proceedings of International Workshop on the Physics of Semiconductor Devices, vol. 2, pp. 963. 2000
   


10. "Detection of Arsenic oxide at the interface of Gd2Ga3015/GaAs using Secondary ion mass spectrometry (SIMS)", B.R.Chakraborty, S. Pal, and D.N.Bose, National Symposium of Instrumentation (NSI-25), 2000.
    

1999

1. “InGaAs strained quantum well with InGaAsP quaternary barriers grown by metal organic vapor phase epitaxy”, T. K. Sharma, Sandip Ghosh, M. R. Gokhle and B. M. Arora, Proc. of DAE Solid State Physics Symposium, Dec 1999, IGCAR, Kalpakkam. Ed. R. Mukhopadhyay, B. K. Godwal and S. M. Yusuf, Vol. 42, 649(1999), Univ. Press.
   


2. “Surface photovoltage spectroscopy of AlGaAs/GaAs heterojunction in the range above the band gap of AlGaAs”, Shailendra Kumar, P. Bhattacharya, U. N. Roy, S. S. Chandvankar and B. M. Arora B.M., Proc. Tenth Int. Workshop on Physics of semiconductor Devices, New Delhi,  Allied Publishers Ltd.,  251-254(1999).
   


3. “Growth of InBixSb1-x crystals by Rotatary Bridgman method and their characterization”, V.K.Dixit, B.V Rodrigues and H.L.Bhat, Presented at the Tenth International  Workshop on the Physics of Semiconductor Devices, December 14-18, 1999,  SSPL,  Lucknow road,  Timarpur,  Delhi, India
   

1998

1. "Characterisation of epitaxial ZnSe films grown by Pulsed Laser Deposition", Tapas Ganguli, Alka Ingale, M.Vedvyas, P.Bhattacharya, L.M.Kukreja, K.P.Adhi and K.C.Rustagi, Proceedings of the Ninth International Conference of the Physics of Semiconductor devices, 1181-1184 (1998).
   


2. "Thickness dependence study of the epitaxial quality of the ZnSe thin films on GaAs deposited by Pulsed laser deposition", Tapas Ganguli, P. Bhattacharya, L. M. Kukreja, K. S. Chandrasekran, B. M. Arora and K. C. Rustagi, Proceedings of the International confenence on the applications of thin films (TATF-98) Nancy, France.
   


3. "Surface Photovoltage Spectroscopic study of ZnSe films deposited on n+GaAs", Shailendra Kumar, Tapas Ganguli, Tarun Sharma, Pijush Bhattarcharya and L.M.Kukreja, Proceedings of the Ninth International Conference of the Physics of Semiconductor devices, 1193-1195 (1998).
   


4. "Study of chemically deposited crystalline CdS film using Surface Photovoltage Spectroscopy", U.N.Roy, Shailendra Kumar, P.Bhattachatya, Tapas Ganguli and K.C.Rustagi, Proceedings of the Ninth International Conference of the Physics of Semiconductor devices, 1240-1242 (1998).
   


5. "Rapid Growth of KH2PO4(KDP) crystals",  V.K.Dixit and H.L.Bhat, Presented at the National Laser Symposium December-1998, Indian Institute of Technology, Kanpur, India.
   

1997

1. "Raman and photoluminesence investigations of epitaxial ZnSe films on n-GaAs", Alka Ingale, Tapas Ganguli, P.Bhattacharya, L.M.Kukreja, M.Vedvyas, K.P.Adhi and K.C.Rustagi, Proceedings of the DAE Solid State Physics, Symposium, Cochin university of Science and technology, Dec. 1997.
   


2. Theory of excited states of polyphenylenes, Aparna Chakrabarti, M. Chandross and S. Mazumdar, SPIE proceedings, SPIE conference no. 3145, edited by Z. V. Vardeny and L. J. Rothberg, 424 (1997).
   


3. Biexcitons in Mixed-Stack Charge-Transfer Solids, Conjugated Polymers, and Molecular Aggregates,  S. Mazumdar, M. Chandross, Y. Shimoi, Aparna Chakrabarti, N. R. Armstrong and N. Peyghambarian, SPIE proceedings, SPIE conference no. 3145, edited by Z. V. Vardeny and L. J. Rothberg, 69 (1997).
   

1996

1. "The study of the dependence of Laser parameters on the structure of a quantum well laser diode", Tapas Ganguli, Proceedings of the Eight International Conference on the Physics of Semiconductor devices, 141(1996).
   

1993

1. Is tetramethylene a ground state triplet?,  Aparna Chakrabarti, I. D. L. Albert, S. Ramasesha, S. Lalitha and J. Chandrasekhar,  Proc. Ind. Acad. Sci. (Chem. Sci.) 105, 53 (1993).