Nitride MOVPE Growth
The indigenously Nitride MOVPE system was developed for growing InN, GaN, AlN and their ternaries. The main features of the system include an indigenously designed gas injection system through a showerhead in a vertical reactor and the reactor has been designed for 1100oC. Before commencing the deposition process, the system was checked for a leak tightness of better than 10-9 Torr/lit/sec of He. The High resolution XRD data of the GaN film have been recorded which indicate that the films deposited on c plane sapphire are epitaxial with good crystalline quality.
 |
 |
 |
| (a) |
(b) |
(c) |
| a) A view of the indigenously developed Nitride MOVPE reator, b) 10K PL data for a GaN epilayer, c) Omega scan data for the GaN epilayer on sapphire. The inset shows the phi scan of the (101) reflection indicating high epitaxial Qauility. |
|
