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We are pursuing an extensive collaborative programme with different divisions of IGCAR. Collaborative projects include (i) Development of laser surface treatment to enhance Intergranular Corrosion (IGC) resistance of 316(N) stainless steel weld metal, (ii) Development of pre-welding laser surface treatment to enhance resistance of type 304 stainless steel against HAZ sensitization and intergranular corrosion (IGC), (iii) resistance of 316(N) weld metal laser hardfacing of Colmonoy on austenitic stainless steel, (iv) mechanical property characterization (including small specimen testing) of laser rapid manufactured specimens and (v) laser surface alloying of austenitic stainless steel for enhancing corrosion resistance of austenitic stainless steel .
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Important fields of collaboration with BARC include end plug laser welding of PFBR fuel pin and development of laser surface treatment for enhanced intergranular corrosion resistance of type 304 austenitic stainless steel.
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We have a BRNS collaborative project with Prof. Nandita Dasgupta's group at Department of Electrical Engineering, IITMadrs, Chennai. We are working on Pulsed Laser Deposition of device grade ultra thin layers of High k Dielectric materials and laser induced oxidation of Si for the development of MTOS devices
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We have an active collaborative program under BRNS with IIT Kharagpur on advanced areas of laser materials processing.
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We are collaborating with IIT Mumbai towards mechanical property characterization of laser rapid manufactured specimens.
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With CUSAT Cochin group we are working on wide band gap p-type Oxide semiconductors such as CuGaO2 and AgGaO2 under a BRNS project. Development of such materials in stable thin film form with p-type conductivity has a potential of integration with ZnO based structures for the development of transparent p-n junctions and electronic devices.
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We have a BRNS collaborative project with Dr. K. P. Adhi's group at Centre for Advanced Studies in Materials Science and Solid State Physics, Department of Physics, University of Pune on PLD of Nitride semiconductors such as GaN and AlN etc. on Sapphire substrates. We have used PLD grown ZnO on Sapphire as template layer for the growth of GaN and AlN. We also collaborate with Prof. Jog's group at Department of Physics, Pune University on the development of nanostructures of LaB6 for field emission applications.
